Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55&\#x00B5;m

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Research areas:
  • Uncategorized
Year:
2019
Type of Publication:
Article
Keywords:
Fiber lasers; Physical vapor deposition; Saturable absorbers; Ultrafast lasers; Ultrafast optics; Variable optical attenuators
Authors:
  • Monroy, L.
  • Jiménez-Rodríguez, M.
  • Ruterana, P.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F. B.
Journal:
Opt. Mater. Express
Volume:
9
Number:
7
Pages:
2785-2792
Month:
July
BibTex:
Abstract:
We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55\&\#x2005;\&\#x00B5;m by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in \$30\$30 \&\#x0025; of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of \$\{\textblackslash\}sim 220\$$\sim$220 fs, a repetition rate of \$5.25\$5.25 MHz, and high-pulse energy of \$5.8\$5.8 nJ.