Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55&\#x00B5;m
Hits: 167
- Research areas:
- Uncategorized
- Year:
- 2019
- Type of Publication:
- Article
- Keywords:
- Fiber lasers; Physical vapor deposition; Saturable absorbers; Ultrafast lasers; Ultrafast optics; Variable optical attenuators
- Authors:
-
- Monroy, L.
- Jiménez-Rodríguez, M.
- Ruterana, P.
- Monroy, E.
- González-Herráez, M.
- Naranjo, F. B.
- Journal:
- Opt. Mater. Express
- Volume:
- 9
- Number:
- 7
- Pages:
- 2785-2792
- Month:
- July
- BibTex:
- Abstract:
- We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55\&\#x2005;\&\#x00B5;m by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in \$30\$30 \&\#x0025; of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of \$\{\textblackslash\}sim 220\$$\sim$220 fs, a repetition rate of \$5.25\$5.25 MHz, and high-pulse energy of \$5.8\$5.8 nJ.