Development of AlInN photoconductors deposited by sputtering

Hits: 427
Research areas:
Year:
2017
Type of Publication:
Article
Keywords:
AlInN III-nitride semiconductors photoconductors sputtering
Authors:
  • Núñez-Cascajero, A.
  • Jiménez-Rodríguez, M.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.
Journal:
Physica Status Solidi (A) Applications and Materials Science
Volume:
214
Number:
9
Month:
September
ISSN:
1862-6300
BibTex:
Abstract:
In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reactive radio-frequency magnetron sputtering. The fabricated devices show a sublinear dependence of the photocurrent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7 W/A for an irradiance of 10 W/m2 (405 nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.